A FeFET with a novel MFMFIS gate stack: towards energy-efficient and ultrafast NVMs for neuromorphic computing

Abstract The discovery of ferroelectricity in the fluorite structure based hafnium oxide (HfO 2 ) material sparked major efforts for reviving ferroelectric field effect transistor (FeFET) memory concept. A Novel metal-ferroelectric-metal-ferroelectric-insulator-semiconductor (MFMFIS) FeFET is reported on dual integration as an MFM and MFIS a single gate stack using Si-doped Hafnium (HSO) (FE) material. MFMFIS top bottom electrode contacts, HSO layers, tailored to area ratio (AR-TB) provide flexible tuning improving performance. AR-TB shows tradeoff between voltage increase weaker FET Si channel inversion, particularly notable drain saturation current I D (sat) when decreases. Dual layer enables maximized window (MW) dynamic control its size by switching contribution through change. via further merits terms low saturated MW size, extremely linear at wide range update, well high symmetry long term synaptic potentiation depression. reliability variability, temperature dependence, endurance, retention. concept thoroughly discussed revealing profound insights optimal enhancing